UA-29213472-1

PHASE CHANGE MEMORY

PHASE CHANGE MEMORY 


Phase Change Memory are Divided into Two Categories :- 


1.) SERIAL PHASE CHANGE MEMORY.


2.) PARALLEL PHASE CHANGE MEMORY.




SERIAL PHASE CHANGE MEMORY 








Micron in Serial Phase Change Memory :- 


1.) Micron's phase change memory (PCM) combines the best traits of traditional memory technologies into a single, nonvolatile device with a straightforward serial interface. Ideal for high-density SPI architectures, P5Q products simplify design, improve system performance, and extend the capabilities of a wide variety of applications.

2.) The Serial PCM is purpose-built to meet the memory requirements of embedded systems, delivering multiple I/O capability and compatibility via familiar SPI NOR interfaces.

3.) Micron's Serial PCM comes in different Packages,Density,Depth,Width type :-

      Density :- 512MB,1GB,2GB,4Gb.
      Depth :-  64Mb,128Mb,256Mb,512Mb.
      Width :-  x72
      Voltage :- 1.8V
      Pin Count :- 200Pin.


PART NO. INFO :- 


Part Density Status Voltage Package Operating Temp
NP5Q032AE3ESFC0E 32Mb Production 2.7V-3.6V SOIC -40C to +85C
NP5Q064AE3ESFC0E 64Mb Production 2.7V-3.6V SOIC -40C to +85C
NP5Q128A13ESFC0E 128Mb Production 2.7V-3.6V SOIC 0C to +70C
NP5Q128AE3ESFC0E 128Mb Production 2.7V-3.6V SOIC -40C to +85C




PARALLEL PHASE CHANGE MEMORY :- 










Micron In Parallel Phase Change Memory :- 


1.) Micron's Parallel phase change memory (PCM) combines the best traits of traditional memory technologies into a single, nonvolatile device with a performance-boosting parallel interface.

2.)  Ideal for high-end high performance embedded applications, second-generation P8P products increase performance, improve endurance, and simplify software management.

3.) Now in its second generation, this device is designed specifically for performance-intensive embedded applications, combining the benefits of phase change memory with the compatibility of a NOR-like parallel interface.

4.) Micron's Parallel PCM  comes in different Packages,Density,Depth,Width type :-

     Density :- 512MB,1GB,2GB,4Gb.
     Depth :-  64Mb,128Mb,256Mb,512Mb.
     Width :-  x72
     Voltage :- 1.8V
     Pin Count :- 200Pin.


PART NO.INFO :-



PART DENSITY STATUS PACKAGE VOLTAGE TEMPREATURE
NP8P128A13B1760E 128Mb Production BGA 2.7V-3.6V 0C to +70C
NP8P128A13BSM60E 128Mb Production TSOP 2.7V-3.6V 0C to +70C
NP8P128A13T1760E 128Mb Production BGA 2.7V-3.6V 0C to +70C
NP8P128A13TSM60E 128Mb Production TSOP 2.7V-3.6V 0C to +70C
NP8P128AE3B1760E 128Mb Production BGA 2.7V-3.6V -40C to +85C
NP8P128AE3BSM60E 128Mb Production TSOP 2.7V-3.6V -40C to +85C
NP8P128AE3T1760E 128Mb Production BGA 2.7V-3.6V -40C to +85C
NP8P128AE3TSM60E 128Mb Production TSOP 2.7V-3.6V -40C to +85C