DRAM IC'S
- SD RAM.
- DDR SDRAM.
- DDR2 SDRAM (DDRII SDRAM).
- DDR3 SDRAM (DDRIII SDRAM).
- RLD RAM
- MOBILE LPSDR.
- MOBILE LPDDR.
- MOBILE LPDDR2.
- PS RAM.
- CELLULAR RAM
1.SDRAM
Characteristics of SDRAM
1.Synchronous DRAM is a generic name for various kind of DRAM that are synchronized with the clock speed that the microprocessor is optimized for.
2.Micron is having one of the broadest SDRAM offerings in the industry. Several densities; extended operating temperatures; and various clock rates, cycle times, and package types make it easy to get just what you need—it’s a relatively simple, cost-effective, and easy-to-implement memory option for both new and existing designs.
3.Micron's SDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 512Mb.256Mb,64Mb,128Mb.
5.Depth :- 128Mb,16Mb,2Mb,32Mb,4Mb and 8 Mb.
6.Width :- x4, x8 , x16 and x32.
7.Voltage :- 3.3V.
8.Package :- TSOP,VFBGA,FBGA.
9.Pin Configuration :- 54 Pin, 54 Ball,60 Ball,90 Ball,86 Pin.
PART NO. INFO.
| Part | Density | Depth | Width | Voltage | Package | Pin Count | Operating Temp |
| MT48LC128M4A2P-75 | 512Mb | 128Mb | x4 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC128M4A2TG-75 | 512Mb | 128Mb | x4 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2BG-75 | 256Mb | 16Mb | x16 | 3.3V | VFBGA | 54-ball | 0C to +70C |
| MT48LC16M16A2BG-75 IT | 256Mb | 16Mb | x16 | 3.3V | VFBGA | 54-ball | -40C to +95C |
| MT48LC16M16A2BG-7E | 256Mb | 16Mb | x16 | 3.3V | VFBGA | 54-ball | 0C to +70C |
| MT48LC16M16A2BG-7E IT | 256Mb | 16Mb | x16 | 3.3V | FBGA | 54-ball | -40C to +95C |
| MT48LC16M16A2FG-75 | 256Mb | 16Mb | x16 | 3.3V | VFBGA | 54-ball | 0C to +70C |
| MT48LC16M16A2FG-75 IT | 256Mb | 16Mb | x16 | 3.3V | VFBGA | 54-ball | -40C to +95C |
| MT48LC16M16A2FG-7E | 256Mb | 16Mb | x16 | 3.3V | VFBGA | 54-ball | 0C to +70C |
| MT48LC16M16A2P-6A | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2P-75 | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2P-75 IT | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | -40C to +95C |
| MT48LC16M16A2P-75 L | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2P-7E | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2P-7E IT | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | -40C to +95C |
| MT48LC16M16A2P-7E L | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2TG-75 | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2TG-75 IT | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | -40C to +95C |
| MT48LC16M16A2TG-75 L | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2TG-7E | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
| MT48LC16M16A2P-75 L | 256Mb | 16Mb | x16 | 3.3V | TSOP | 54-pin | 0C to +70C |
2.DDR CHIPS
Characteristics in DDR CHIPS
1.Compared to single Data Rate ( SDR ) SDRAM,the DDR SDRAM interface makes higher transfer rates possible by more strict control of timing of electrical data and clock signals.
2.it is a revolutionary and pioneering technology—enabling applications to transfer data on both the rising and falling edges of a clock signal—and vastly improving performance over SDRAM. And because DDR continues to be an ideal choice for many new designs, we’re committed to supporting it for the long term.
3.Micron's DDR SDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 512Mb,1GB,256Mb.
5.Depth :- 16Mb,32mb,64Mb,128Mb and 256Mb.
6.Width :- x4, x8 , x16.
7.Voltage :- 2.5V and 2.6V
8.Package :- TSOP,DIE,FBGA and wafer
9.Pin Configuration :- 60 Ball,66Ball,54Ball
PART NO. INFO.
| Part | Density | Depth | Width | Voltage | Package | Pin Count | Operating Temp |
| MT46V128M4BN-5B | 512Mb | 128Mb | x4 | 2.6V | FBGA | 60-pin | 0C to +70C |
| MT46V128M4BN-6 | 512Mb | 128Mb | x4 | 2.5V | FBGA | 60-ball | 0C to +70C |
| MT46V128M4FN-5B | 512Mb | 128Mb | x4 | 2.6V | FBGA | 60-ball | 0C to +70C |
| MT46V128M4FN-6 | 512Mb | 128Mb | x4 | 2.5V | FBGA | 60-ball | 0C to +70C |
| MT46V128M4P-5B | 512Mb | 128Mb | x4 | 2.6V | TSOP | 66-balll | 0C to +70C |
| MT46V128M4P-6T | 512Mb | 128Mb | x4 | 2.5V | TSOP | 66-balll | 0C to +70C |
| MT46V128M4TG-6T | 512Mb | 128Mb | x4 | 2.5V | TSOP | 66-balll | 0C to +70C |
| MT46V128M8P-6T | 1Gb | 128Mb | x8 | 2.5V | TSOP | 66-ball | 0C to +70C |
| MT46V128M8P-6T IT | 1Gb | 128Mb | x8 | 2.5V | TSOP | 66-ball | -40C to +95C |
| MT46V128M8P-75 | 1Gb | 128Mb | x8 | 2.5V | TSOP | 66-ball | 0C to +70C |
| MT46V128M8TG-6T | 1Gb | 128Mb | x8 | 2.5V | TSOP | 66-balll | 0C to +70C |
| MT46V128M8TG-75 | 1Gb | 128Mb | x8 | 2.5V | TSOP | 66-balll | 0C to +70C |
| MT46V16M16BG-5B | 256Mb | 16Mb | x16 | 2.6V | FBGA | 60-pin | 0C to +70C |
| MT46V16M16BG-5B IT | 256Mb | 16Mb | x16 | 2.6V | FBGA | 60-pin | -40C to +95C |
| MT46V16M16BG-6 | 256Mb | 16Mb | x16 | 2.5V | FBGA | 60-pin | 0C to +70C |
| MT46V16M16BG-6 IT | 256Mb | 16Mb | x16 | 2.5V | FBGA | 60-pin | -40C to +95C |
| MT46V16M16BG-75 | 256Mb | 16Mb | x16 | 2.5V | FBGA | 60-pin | 0C to +70C |
| MT46V16M16CV-5B | 256Mb | 16Mb | x16 | 2.6V | FBGA | 60-pin | 0C to +70C |
| MT46V16M16CV-6 IT | 256Mb | 16Mb | x16 | 2.5V | FBGA | 60-pin | -40C to +95C |
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3.DDR2 SDRAM
Characteristics of DDR2 SDRAM
1.The double pumping data bus in DDR SDRAM,it allows higher bus speed and requires low power by running the internal clock at half the speed of data bus.
2.A wide array of capabilities makes our DDR2 an excellent memory choice for the diverse needs of many applications—from automotive and industrial to server, consumer, networking, and computing.
3.Micron's DDR2 SDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 512Mb,1GB,256Mb,2GB,4GB.
5.Depth :- 16Mb,32mb,64Mb,128Mb and 256Mb and 512Mb.
6.Width :- x4, x8 , x16.
7.Voltage :- 1.5V and 1.8V
8.Package :- FBGA and V-FBGA
9.Pin Configuration :- 84Pin and 84 Bal, 60Ball, 63 Ball.
PART NO.INFO.
| Part | Density | Depth | Width | Voltage | Package | Pin Count | Operating Temp |
| MT47H128M16HG-25 | 2Gb | 128Mb | x16 | 1.8V | FBGA | 84-pin | 0C to +85C |
| MT47H128M16HG-3 | 2Gb | 128Mb | x16 | 1.8V | FBGA | 84-ball | 0C to +85C |
| MT47H128M16HG-3 IT | 2GB | 128Mb | x16 | 1.8V | FBGA | 84-ball | -40C to +95C |
| MT47H128M16HG-37E | 2Gb | 128Mb | x16 | 1.8V | FBGA | 84-ball | 0C to +85C |
| MT47H128M4B6-25E | 512Mb | 128Mb | x4 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M4B6-3 | 512Mb | 128Mb | x4 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M4CF-25 | 512Mb | 128Mb | x4 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M4CF-25E | 512Mb | 128Mb | x4 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M4CF-3 | 512Mb | 128Mb | x4 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-187E | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-25 | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-25E | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-3 | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-3 IT | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | -40C to +95C |
| MT47H128M8HQ-3 L | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-37E | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-37E IT | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | -40C to +95C |
| MT47H128M8HQ-37E L | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-3E | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-5E | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | 0C to +85C |
| MT47H128M8HQ-5E IT | 1Gb | 128Mb | x8 | 1.8V | FBGA | 60-ball | -40C to +95C |
| MT47H128M8HV-3 | 1Gb | 128Mb | x8 | 1.8V | VFBGA | 60-ball | 0C to +85C |
| MT47H16M16BG-3 | 256Mb | 16Mb | x16 | 1.8V | FBGA | 84-ball | 0C to +85C |
| MT47H16M16BG-3 IT | 256Mb | 16Mb | x16 | 1.8V | FBGA | 84-ball | -40C to +95C |
| MT47H16M16BG-37E | 256Mb | 16Mb | x16 | 1.8V | FBGA | 84-ball | 0C to +85C |
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4.DDR3 SDRAM
Characteristics of DDR3 SDRAM CHIPS
1.DDR3-SDRAM for double data rate type three synchronous dynamic random access memory is a DRAM with higher bandwidth interface.
2.DDR3 supports data rates of 1066 to 1600 MT/s, with clock frequencies of 533 to 800 MHz, respectively—effectively doubling the speed of DDR2. DDR3's standard 1.5V supply voltage cuts power consumption by up to 30% over DDR2.
3.Micron's DDR3 SDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 1GB,2GB, and 4GB.
5.Depth :- 64Mb,128Mb and 256Mb and 512Mb AND 1 GB
6.Width :- x4, x8 , x16.
7.Voltage :- 1.35V and 1.5V
8.Package :- FBGA.
9.Pin Configuration :- 78 Ball, 82 Ball , 86 Pin, 96 Ball
PART NO. INFO.
| Part | Density | Depth | Width | Voltage | Package | Pin Count | Operating Temp |
| MT41J128M8BY-15E | 1Gb | 128Mb | x8 | 1.5V | FBGA | 86-pin | 0C to +95C |
| MT41J128M8BY-187E | 1Gb | 128Mb | x8 | 1.5V | FBGA | 86-ball | 0C to +95C |
| MT41J128M8HX-15E | 1Gb | 128Mb | x8 | 1.5V | FBGA | 78-ball | 0C to +95C |
| MT41J128M8HX-15E IT | 1Gb | 128Mb | x8 | 1.5V | FBGA | 78-ball | -40C to +95C |
| MT41J128M8HX-187E | 1Gb | 128Mb | x8 | 1.5V | FBGA | 78-balll | 0C to +95C |
| MT41J128M8HX-187E IT | 1Gb | 128Mb | x8 | 1.5V | FBGA | 78-balll | -40C to +95C |
| MT41J128M8JP-15E | 1Gb | 128Mb | x8 | 1.5V | FBGA | 78-balll | 0C to +95C |
| MT41J128M8JP-187E | 1Gb | 128Mb | x8 | 1.5V | FBGA | 78-ball | 0C to +95C |
| MT41J1G4THU-15E | 4Gb | 1Gb | x4 | 1.5V | FBGA | 82-ball | 0C to +95C |
| MT41J1G4THU-187E | 4Gb | 1Gb | x4 | 1.5V | FBGA | 82-ball | 0C to +95C |
| MT41J256M4HX-15E | 1Gb | 256Mb | x4 | 1.5V | FBGA | 78-balll | 0C to +95C |
| MT41J256M4HX-187E | 1Gb | 256Mb | x4 | 1.5V | FBGA | 78-balll | 0C to +95C |
| MT41J256M4JP-15E | 1Gb | 256Mb | x4 | 1.5V | FBGA | 78-ball | 0C to +95C |
| MT41J256M4JP-187E | 1Gb | 256Mb | x4 | 1.5V | FBGA | 78-ball | 0C to +95C |
| MT41J256M8JE-15E | 2Gb | 256Mb | x8 | 1.5V | FBGA | 82-ball | 0C to +95C |
| MT41J256M8JE-187E | 2Gb | 256Mb | x8 | 1.5V | FBGA | 82-ball | 0C to +95C |
| MT41J256M8THR-15E | 2Gb | 256Mb | x8 | 1.5V | FBGA | 78-ball | 0C to +95C |
| MT41J256M8THR-187E | 2Gb | 256Mb | x8 | 1.5V | FBGA | 78-ball | 0C to +95C |
| MT41J512M4JE-15E | 2Gb | 512Mb | x4 | 1.5V | FBGA | 82-ball | 0C to +95C |
| MT41J512M4JE-187E | 2Gb | 512Mb | x4 | 1.5V | FBGA | 82-ball | 0C to +95C |
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5.RLDRAM
Characteristics RLDRAM Memo
1.RLDRAM Memory is a Low-Latency,High bandwidth DRAM that is designed for demanding network task and L3 Cache as well as other applications that requires back to back READ/WRITE operations.
2.Our reduced-latency DRAM (RLDRAM- memory) is a high-performance, high-density memory solution that offers fast SRAM-like random access and outpaces even leading-edge DDR3 for sustained high bandwidth.
3.Micron's RLDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 256Mb, 288Mb, 576Mb etc.
5.Depth :- 16Mb,32Mb,4Mb,8 Mb and 64Mb.
6.Width :- X9 , X18 , X16
7.Voltage :- 1.8V
8.Package :- FBGA and µBGA.
PART NO. INFO.
| Part | Density | Depth | Width | Voltage | Package | Pin Count | Operating Temp |
| MT49H16M16FM-33 | 256Mb | 16Mb | x16 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M16FM-5 | 256Mb | 16Mb | x16 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18BM-25 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18BM-33 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18BM-33 IT | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | -40C to +95C |
| MT49H16M18BM-5 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18CBM-25 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18CBM-33 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18CBM-33 IT | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | -40C to +95C |
| MT49H16M18CBM-5 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18CFM-25 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18CFM-33 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18CFM-33 IT | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | -40C to +95C |
| MT49H16M18CFM-5 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18CFM-5 IT | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | -40C to +95C |
| MT49H16M18FM-25 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18FM-33 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M18FM-33 IT | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | -40C to +95C |
| MT49H16M18FM-5 | 288Mb | 16Mb | x18 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M36BM-18 | 576Mb | 16Mb | x36 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M36BM-25 | 576Mb | 16Mb | x36 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M36BM-25E | 576Mb | 16Mb | x36 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M36BM-33 | 576Mb | 16Mb | x36 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M36FM-18 | 576Mb | 16Mb | x36 | 1.8V | uBGA | 144-ball | 0C to +95C |
| MT49H16M36FM-18 IT | 576Mb | 16Mb | x36 | 1.8V | uBGA | 144-ball | -40C to +95C |
| MT49H16M36FM-25 | 576Mb | 16Mb | x36 | 1.8V | uBGA | 144-ball | 0C to +95C |
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6.LPDARM
Characteristics of LPDARM CHIPS
1.LPDRAM has the low power consumption,High Performance and wide temperature ranges you need to give your customers great mobility and larger battery life.
2.Micron's Mobile LPDRAM is built to consume less power without sacrificing performance. It uses a JEDEC-standard 1.8V I/O power supply—1.2V for LPDDR2—which enables low standby current and low self refresh and extends battery life.
3.Micron's LPDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 512Mb,256Mb,64Mb,128Mb,1GB,2GB,4GB.
5.Depth :- 128Mb,16Mb,32Mb,4Mb,64 Mb,8 Mb.
6.Width :- x16 , x32, x64
7.Voltage :- 1.2V,1.8V,2.5V,3.3V ,1.8V.
8.Package :- VFBGA,POP
PART NO. INFO.
| Part | Density | Depth | Width | Voltage | Package | Pin Count | Operating Temp |
| MT46H128M32L4KZ-6 IT | 4Gb | 128Mb | x32 | 1.8V | POP | -40C to +85C | |
| MT46H16M16LFBF-5 | 256Mb | 16Mb | x16 | 1.8V | VFBGA | 60-ball | 0C to +70C |
| MT46H16M16LFBF-5 IT | 256Mb | 16Mb | x16 | 1.8V | VFBGA | 60-ball | -40C to +85C |
| MT46H16M16LFBF-6 | 256Mb | 16Mb | x16 | 1.8V | VFBGA | 60-ball | 0C to +70C |
| MT46H16M16LFBF-6 AT | 256Mb | 16Mb | x16 | 1.8V | VFBGA | 60-ball | -40C to +105C |
| MT46H16M16LFBF-6 IT | 256Mb | 16Mb | x16 | 1.8V | VFBGA | 60-ball | -40C to +85C |
| MT46H16M16LFBF-75 | 256Mb | 16Mb | x16 | 1.8V | VFBGA | 60-ball | 0C to +70C |
| MT46H16M16LFBF-75 IT | 256Mb | 16Mb | x16 | 1.8V | VFBGA | 60-ball | -40C to +85C |
| MT46H16M32LFCG-6 IT | 512Mb | 16Mb | x32 | 1.8V | POP | 152-ball | -40C to +85C |
| MT46H16M32LFCM-5 | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | 0C to +70C |
| MT46H16M32LFCM-5 AT | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | -40C to +105C |
| MT46H16M32LFCM-6 | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | 0C to +70C |
| MT46H16M32LFCM-6 IT | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | -40C to +85C |
| MT46H16M32LFCX-5 | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | 0C to +70C |
| MT46H16M32LFCX-5 IT | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | -40C to +85C |
| MT46H16M32LFCX-6 | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | 0C to +70C |
| MT46H16M32LFCX-6 IT | 512Mb | 16Mb | x32 | 1.8V | VFBGA | 90-ball | -40C to +85C |
| MT46H32M16LFBF-5 | 512Mb | 32Mb | x16 | 1.8V | VFBGA | 60-ball | 0C to +70C |
| MT46H32M16LFBF-6 | 512Mb | 32Mb | x16 | 1.8V | VFBGA | 60-ball | 0C to +70C |
| MT46H32M16LFBF-6 AT | 512Mb | 32Mb | x16 | 1.8V | VFBGA | 60-ball | -40C to +105C |
| MT46H32M16LFBF-6 IT | 512Mb | 32Mb | x16 | 1.8V | VFBGA | 60-ball | -40C to +85C |
| MT46H32M32LFCG-5 IT | 1Gb | 32Mb | x32 | 1.8V | POP | 152-ball | -40C to +85C |
| MT46H32M32LFCG-6 | 1Gb | 32Mb | x32 | 1.8V | POP | 152-ball | 0C to +70C |
| MT46H32M32LFCG-6 IT | 1Gb | 32Mb | x32 | 1.8V | POP | 152-ball | -40C to +85C |
| MT46H32M32LFCM-6 | 1Gb | 32Mb | x32 | 1.8V | VFBGA | 90-ball | 0C to +70C |
| MT46H32M32LFCM-6 AT | 1Gb | 32Mb | x32 | 1.8V | VFBGA | 90-ball | -40C to +105C |
| MT46H32M32LFCM-6 IT | 1Gb | 32Mb | x32 | 1.8V | VFBGA | 90-ball | -40C to +85C |
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7.PSRAM ( PSEUDO STATIC RAM )
Characteristics of PSRAM CHIPS
1.PSRAM is a device that features an SDRAM like Architecture,Hidden Refresh Operation and SRAM Pin compatibility.
2.This hybrid memory delivers the best of SRAM and DRAM Features, Combining low power consumption and high speed Read and Write Functions.
3.Because CellularRAM memory also offers synchronous operations, fast access, and variable latency initial burst access, you get high throughput and excellent performance. It's an ideal solution for low-power, space-limited designs like MCPs, as well as mobile and industrial applications.
4.Micron's PSRAM comes in different Packages,Density,Depth,Width type :-
5.Density :- 4Mb,8Mb,16Mb,32Mb,64Mb,128Mb.
6.Depth :- 256k,512k,1Mb,2Mb,4Mb,8Mb.
7.Width :- x16
8.Voltage :- 1.7V - 3.6V
9.Package :- VFBGA.
10.Pin Count :- 48 Ball and 54Ball.
PART NO. INFO.
| Part | Density | Depth | Width | Voltage | Package | Pin Count | Operating Temp |
| MT45W1MW16BDGB-701 WT | 16Mb | 1Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -30C to +85C |
| MT45W1MW16BDGB-708 AT | 16Mb | 1Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -40C to +85C |
| MT45W1MW16BDGB-708 IT | 16GB | 1Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -40C to +95C |
| MT45W1MW16BDGB-708 WT | 16GB | 1Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -30C to +85C |
| MT45W1MW16PDGA-70 IT | 16GB | 1Mb | x16 | 1.7V-3.3V | VFBGA | 48-ball | -40C to +95C |
| MT45W1MW16PDGA-70 WT | 16Mb | 1Mb | x16 | 1.7V-3.3V | VFBGA | 48-ball | -30C to +85C |
| MT45W256KW16BEGB-708 WT | 4Mb | 256K | x16 | 1.7V-3.3V | VFBGA | 54-ball | -30C to +85C |
| MT45W256KW16PEGA-70 WT | 4Mb | 256K | x16 | 1.7V-3.3V | VFBGA | 48-ball | -30C to +85C |
| MT45W2MW16BGB-701 WT | 32Mb | 2Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -30C to +85C |
| MT45W2MW16BGB-708 AT | 32Mb | 2Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -40C to +105C |
| MT45W2MW16BGB-708 IT | 32Mb | 2Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -40C to +95C |
| MT45W2MW16BGB-708 WT | 32Mb | 2Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -30C to +85C |
| MT45W2MW16PGA-70 IT | 32Mb | 2Mb | x16 | 1.7V-3.6V | VFBGA | 48-ball | -40C to +95C |
| MT45W2MW16PGA-70 WT | 32Mb | 2Mb | x16 | 1.7V-3.6V | VFBGA | 48-ball | -30C to +85C |
| MT45W4MW16BCGB-701 IT | 64Mb | 4Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -40C to +95C |
| MT45W4MW16BCGB-701 WT | 64Mb | 4Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -30C to +85C |
| MT45W4MW16BCGB-708 IT | 64Mb | 4Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -30C to +85C |
| MT45W4MW16BCGB-708 WT | 64Mb | 4Mb | x16 | 1.7V-3.3V | VFBGA | 54-ball | -30C to +85C |
| MT45W4MW16PCGA-70 IT | 64Mb | 4Mb | x16 | 1.7V-3.3V | VFBGA | 48-ball | -40C to +95C |
| MT45W4MW16PCGA-70 L WT | 64Mb | 4Mb | x16 | 1.7V-3.3V | VFBGA | 48-ball | -30C to +85C |
| MT45W4MW16PCGA-70 WT | 64Mb | 4Mb | x16 | 1.7V-3.3V | VFBGA | 48-ball | -30C to +85C |
| MT45W512KW16BEGB-708 WT | 8Mb | 512K | x16 | 1.7V-3.3V | VFBGA | 54-ball | -30C to +85C |
| MT45W512KW16PEGA-70 WT | 8Mb | 512K | x16 | 1.7V-3.3V | VFBGA | 48-ball | -30C to +85C |
| MT45W8MW16BGX-701 IT | 128Mb | 8Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -40C to +95C |
| MT45W8MW16BGX-701 WT | 128Mb | 8Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -30C to +85C |
| MT45W8MW16BGX-7013 WT | 128Mb | 8Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -30C to +85C |
| MT45W8MW16BGX-708 IT | 128Mb | 8Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -40C to +95C |
| MT45W8MW16BGX-708 WT | 128Mb | 8Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -30C to +85C |
| MT45W8MW16BGX-856 AT | 128Mb | 8Mb | x16 | 1.7V-3.6V | VFBGA | 54-ball | -40C to +105C |
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